The first commercial transistors had a top-down structure made entirely of silicon: specifically, a polysilicon gate electrode, a thin (~20 nm) SiO 2 dielectric and a silicon bulk channel 1,2. In the ...
Amorphous oxide semiconductors could be used as thin channel materials in future back-end-of-line-compatible electronics. However, thin body amorphous materials suffer from Joule heating due to the ...
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