Last week I revealed the sneaky physics behind the “joule thief,” an electrical circuit that lets you squeeze more energy out of seemingly dead batteries. The key, it turned out, was a clever pairing ...

For decades, the speed of transistors has been approaching its physical limit. Now, researchers have built a new type of vacuum/air channel electron tube that completely eliminates a fatal flaw that ...

The Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) has developed an experimental process flow for building stacked-nanosheet gate-all-around (GAA) transistors using ...

Atomically thin semiconductors could enable dramatically smaller and more efficient chips, but a stubborn problem at the boundary between materials has limited their performance. Researchers have now ...

Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports scalable 3D semiconductor integration. (Nanowerk News) Researchers at the Daegu ...

Researchers from NYCU and TSMC show that redefining the atomic boundary between materials can address a major engineering barrier restricting the development of next-generation semiconductor devices.

Newswise — Planar vacuum electron tubes made with microelectronics technology have been explored for over a decade as a potential successor to solid‑state transistors, because electrons in vacuum can ...