Last week I revealed the sneaky physics behind the “joule thief,” an electrical circuit that lets you squeeze more energy out of seemingly dead batteries. The key, it turned out, was a clever pairing ...

The Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) has developed an experimental process flow for building stacked-nanosheet gate-all-around (GAA) transistors using ...

Atomically thin semiconductors could enable dramatically smaller and more efficient chips, but a stubborn problem at the boundary between materials has limited their performance. Researchers have now ...

Newswise — Planar vacuum electron tubes made with microelectronics technology have been explored for over a decade as a potential successor to solid‑state transistors, because electrons in vacuum can ...

Researchers patterned conductive metal–organic framework films into gate electrodes for three semiconductor materials and demonstrated a functioning 23-transistor array using standard lithography.

Researchers from NYCU and TSMC show that redefining the atomic boundary between materials can address a major engineering barrier restricting the development of next-generation semiconductor devices.

For decades, the speed of transistors has been approaching its physical limit. Now, researchers have built a new type of vacuum/air channel electron tube that completely eliminates a fatal flaw that ...