Tunnelling field-effect transistors exploit quantum mechanical band-to-band tunnelling to achieve steep subthreshold swing and ultra-low power consumption. Unlike conventional MOSFETs, TFETs rely on ...
An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...
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