Staera Semiconductor has emerged from stealth mode with an optical data link technology called Lightwire that combines silicon CMOS circuits, GaN LED light sources and SiN waveguides into one chip.

Nexperia has announced new ultra-low-ohmic GaN FETs, expanding its low- and medium-voltage GaN portfolio with devices spanning 18 V to 200 V.

Onsemi has introduced EliteSiC M4, its fourth-generation SiC platform built on a trench architecture and designed to set a new performance benchmark for next-generation power systems.

The team has developed an ultra-wide bandgap (UWBG) semiconductor Ga 2 O 3 power module capable of handling megawatt-level power conversion, opening new possibilities for compact and highly efficient ...

As part of a project commissioned by Japan’s Ministry of the Environment, Mitsubishi Electric has explained the frequency dispersion caused by crystal defects in a high-frequency GaN transistor made ...

Infineon Technologies has successfully processed 300-mm SiC wafers into functional power devices at its fab in Villach, Austria. It claims to be the first company to pioneer this innovation milestone ...

Eulitha AG, a Swiss provider of high-throughput optical lithography tools, has announced deliveries of multiple automated tools to foundries for the production of InP DFB lasers to be used in AI data ...

US sensor company MicroVision has announced a multi-year partnership agreement with Lake Fusion Technologies (LFT), a German developer of situational awareness systems.

A punch-through gate design equips the E-mode GaN HEMT with an inherent non-destructive breakdown capability.

Fremont-based Penguin Solutions, which describes itself as an 'AI Factory Platform company', has agreed to sell its Cree LED business to private equity firm Transom Capital Group in an all-cash ...

Gallium Defence, a Paris-based startup working on drone detection at a fraction of the cost of legacy systems, has emerged from stealth mode with a €7.1m Seed funding round, according to reports by EU ...